AS4C256M16D3LC-10BIN

Alliance Memory
913-4C256M16D3L10BIN
AS4C256M16D3LC-10BIN

Mfr.:

Description:
DRAM DDR3, 4G, 256M X 16, 1.35V, 96-BALL FBGA, 933MHZ, Industrial Temp - Tray

Datasheet:
ECAD Model:
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Learn more about Alliance Memory AS4C256M16D3LC-10BIN

In Stock: 284

Stock:
284 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
21,15 € 21,15 €
19,57 € 195,70 €
18,95 € 473,75 €
18,48 € 924,00 €
17,69 € 1.769,00 €
17,48 € 3.653,32 €
17,33 € 7.243,94 €
1.045 Quote

Product Attribute Attribute Value Select Attribute
Alliance Memory
Product Category: DRAM
RoHS:  
SDRAM - DDR3L
4 Gbit
16 bit
933 MHz
FBGA-96
256 M x 16
20 ns
1.283 V
1.45 V
- 40 C
+ 95 C
Tray
Brand: Alliance Memory
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
Moisture Sensitive: Yes
Mounting Style: SMD/SMT
Product Type: DRAM
Factory Pack Quantity: 209
Subcategory: Memory & Data Storage
Supply Current - Max: 84 mA
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Attributes selected: 0

Datasheet

CNHTS:
8542329010
CAHTS:
8542320020
USHTS:
8542320036
MXHTS:
8542320299
ECCN:
EAR99

DDR3 Synchronous DRAM

Alliance Memory DDR3 Synchronous DRAM (SDRAM) achieves high-speed double-data-rate transfer rates of up to 1600Mb/sec/pin for general applications. The chip is designed to comply with all key DDR3 DRAM key features, and all of the control and address inputs are synchronized with a pair of externally supplied differential clocks. Inputs are latched at the cross point of differential clocks (CK rising and CK# falling). All I/Os are synchronized with differential DQS pairs in a source synchronous fashion. These Alliance Memory devices operate with a single 1.5V ± 0.075V power supply and are available in BGA packages.

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