It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IXFP72N30X3

Name: IXYS IXFP72N30X3
Brand: IXYS
SKU: 747-IXFP72N30X3
Price: 9.2 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

747-IXFP72N30X3

Mfr. No:

IXFP72N30X3

Mfr.:

IXYS

Description:

MOSFETs TO220 300V 72A N-CH X3CLASS

Datasheet:

IXFP72N30X3 Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about IXYS IXFP72N30X3

In Stock: 1.869

Stock:: 1.869

Can Dispatch Immediately

An unexpected error occurred. Please try again later.
On Order:: 1.899

49

Pending

1.850

Expected 19/05/2026
Factory Lead Time:: 27

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	9,20 €	9,20 €
	5,23 €	52,30 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	300 V
Id - Continuous Drain Current:	72 A
Rds On - Drain-Source Resistance:	19 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	82 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	390 W
Channel Mode:	Enhancement
Tradename:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	11 ns
Forward Transconductance - Min:	36 S
Product Type:	MOSFETs
Rise Time:	25 ns
Factory Pack Quantity:	50
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	86 ns
Typical Turn-On Delay Time:	22 ns
Unit Weight:	2 g

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IXFP72N30X3 Datasheet

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Heat Pumps

Littelfuse provides a broad portfolio of components for heat pumps, including fuses, TVS diodes, gate drivers, and more. The heat pump market is growing quickly, driven by government initiatives to reduce greenhouse gas emissions and rising energy costs. With inverter-driven motors improving system efficiencies, heat pumps can now be used in a wide range of climates. Learn how Littelfuse technologies make heat pumps safer, more reliable, and more energy efficient. Heat pumps can be used in a wide range of climates due to the inverter-driven motors improving system efficiencies. These components are suitable for various applications such as energy management, security systems, HVAC systems, smoke detectors, and IoT-controlled appliances. Littelfuse offers protect, control, and sense technologies to improve buildings' reliability, safety, and energy efficiency.

Solar Inverters & Battery Energy Storage Systems

Littelfuse Solar Inverters and Battery Energy Storage Systems (BESS) can operate in both AC and DC coupled solar systems. The AC coupled solar system features two inverters, offering higher flexibility and easier installation. DC coupled solar systems have a single inverter and provide higher efficiency because the shorter cables between BESS and PV reduce losses. Littelfuse Solar Inverters and BESS components include TVS diodes, MOSFETs, IGBT drivers, fuses, relays, and more.

X-Class 850V - 1000V Power MOSFETs with HiPerFET™

IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).

X3-Class Power MOSFETs with HiPerFET™

IXYS X3-Class Power MOSFETs with HiPerFET™ are avalanche-rated fast intrinsic diodes with N-channel enhancement mode. These MOSFETs feature low R_DS(ON), low gate charge (Q_G), and high-power density. IXYS X3-Class 200V-300V Power MOSFETs with HiPerFET remove leftover energies during high-speed switching to avoid device failure. Typical applications include DC-to-DC converters, power supplies, robotics, servo controls, and battery chargers for light electric vehicles.

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.