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IXFX64N60Q3

Name: IXYS IXFX64N60Q3
Brand: IXYS
SKU: 747-IXFX64N60Q3
Price: 22.67 EUR
Availability: OutOfStock

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Mouser No:

747-IXFX64N60Q3

Mfr. No:

IXFX64N60Q3

Mfr.:

IXYS

Description:

MOSFETs Q3Class HiPerFET Pwr MOSFET 600V/64A

Datasheet:

IXFX64N60Q3 Datasheet

ECAD Model:

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Availability

Stock:: Non-Stocked

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Factory Lead Time:: 46 Weeks Estimated factory production time.

Long lead time reported on this product.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	22,67 €	6.801,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	64 A
Rds On - Drain-Source Resistance:	95 mOhms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Qg - Gate Charge:	190 nC
Pd - Power Dissipation:	1.25 kW
Tradename:	HiPerFET
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Product Type:	MOSFETs
Rise Time:	300 ns
Series:	IXFX64N60
Factory Pack Quantity:	30
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	6 g

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Datasheet

IXFX64N60Q3 Datasheet

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TARIC:: 8541900000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 8541900299
ECCN:: EAR99

Electrical Vehicle DC Fast Chargers

DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.

HiPerFET™ Power MOSFETs

IXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.