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IXTH1N200P3HV

Name: IXYS IXTH1N200P3HV
Brand: IXYS
SKU: 747-IXTH1N200P3HV
Price: 8.94 EUR
Availability: InStock

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Mouser No:

747-IXTH1N200P3HV

Mfr. No:

IXTH1N200P3HV

Mfr.:

IXYS

Description:

MOSFETs 2000V/1A HV Power MOSFET, TO-247HV

Datasheet:

IXTH1N200P3HV Datasheet

ECAD Model:

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In Stock: 398

Stock:: 398

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On Order:: 297
Factory Lead Time:: 26

Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	8,94 €	8,94 €
	6,23 €	62,30 €
	5,28 €	633,60 €
	4,89 €	2.493,90 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	2 kV
Id - Continuous Drain Current:	1 A
Rds On - Drain-Source Resistance:	40 Ohms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	23.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	125 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	KR
Fall Time:	80 ns
Forward Transconductance - Min:	400 mS
Product Type:	MOSFETs
Rise Time:	26 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Typical Turn-Off Delay Time:	37 ns
Typical Turn-On Delay Time:	16 ns
Unit Weight:	6 g

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Datasheet

IXTH1N200P3HV Datasheet

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

2000V High Voltage Power MOSFETs

IXYS 2000V High Voltage Power MOSFETs are the highest voltage Power MOSFET product line in the industry in international standard size packages. The current ratings range from 0.6A to 3A. They are specifically designed to address high blocking voltage and high voltage packages.