IPD11DP10NMATMA1

Infineon Technologies
726-IPD11DP10NMATMA1
IPD11DP10NMATMA1

Mfr.:

Description:
MOSFETs IFX FET >80 - 100V

ECAD Model:
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In Stock: 2.882

Stock:
2.882 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
1,76 € 1,76 €
1,08 € 10,80 €
0,762 € 76,20 €
0,606 € 303,00 €
0,573 € 573,00 €
Full Reel (Order in multiples of 2500)
0,486 € 1.215,00 €

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
P-Channel
1 Channel
100 V
22 A
111 mOhms
- 20 V, 20 V
4 V
59 nC
- 55 C
+ 175 C
125 W
Enhancement
Reel
Cut Tape
Brand: Infineon Technologies
Country of Assembly: MY
Country of Diffusion: AT
Country of Origin: AT
Product Type: MOSFETs
Series: IPD11DP10
Factory Pack Quantity: 2500
Subcategory: Transistors
Part # Aliases: IPD11DP10NM SP001656992
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TARIC:
8541290000
CNHTS:
8541290000
USHTS:
8541290065
ECCN:
EAR99

12V-250V P-Channel Power MOSFETs

Infineon 12V-250V P-Channel Power MOSFETs offer the designer a new option that can simplify circuitry while optimising performance. The main advantage of a P-Channel device is the reduction of design complexity in medium- and low-power applications. P-Channel Power MOSFETs are ideally suited for battery protection, reverse polarity protection, linear battery chargers, load switching, DC-DC converters, and low-voltage drive applications.