IPW60R070CFD7XKSA1

Infineon Technologies
726-IPW60R070CFD7XKS
IPW60R070CFD7XKSA1

Mfr.:

Description:
MOSFETs HIGH POWER_NEW

Datasheet:
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Learn more about Infineon Technologies IPW60R070CFD7XKSA1

In Stock: 3.271

Stock:
3.271 Can Dispatch Immediately
Factory Lead Time:
19 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
5,77 € 5,77 €
3,32 € 33,20 €
2,78 € 278,00 €
2,54 € 1.219,20 €

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
RoHS:  
Si
Through Hole
TO-247-3
N-Channel
1 Channel
600 V
31 A
57 mOhms
- 20 V, 20 V
3.5 V
67 nC
- 55 C
+ 150 C
156 W
Enhancement
CoolMOS
Tube
Brand: Infineon Technologies
Configuration: Single
Country of Assembly: CN
Country of Diffusion: AT
Country of Origin: AT
Fall Time: 6 ns
Product Type: MOSFETs
Rise Time: 23 ns
Series: CoolMOS CFD7
Factory Pack Quantity: 240
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 99 ns
Typical Turn-On Delay Time: 26 ns
Part # Aliases: IPW60R070CFD7 SP001617990
Unit Weight: 6 g
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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
8541290100
KRHTS:
8541299000
MXHTS:
85412999
ECCN:
EAR99

CFD7 CoolMOS™ MOSFETs

Infineon Technologies CFD7 CoolMOS™ MOSFETs are ideal for resonant high power topologies and feature high voltage superjunction MOSFET technology. The MOSFETs have an integrated fast body diode and completes the CoolMOS 7 series. Typical high power switch-mode power supply (SMPS) applications include server, telecom, and EV charging stations.

CoolMOS™ Superjunction MOSFETs

Infineon CoolMOS™ Power Transistors provide all the benefits of a fast-switching SJ MOSFET. Combined with the generation CoolMOS 7, Infineon continues to set price, performance, and quality benchmarks.

CoolMOS™ 7 Superjunction MOSFETs

Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs are optimized for energy efficiency, power density, and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, adapters and chargers can be made smaller, lighter, and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.

Fast DC EV Charging Solutions

Infineon Technologies Fast DC Electric Vehicle (EV) Charging Solutions address the needs for e-mobility. With the ever-growing number of electric vehicles on the market and pressure from governments to reduce vehicle emissions to zero by 2050, there is a great need for more efficient charging solutions. As various consumer studies show, the acceptance of electromobility depends largely on the availability and duration of the charging process. High-power DC charging stations are the answer to these market requirements. Today, a typical electric vehicle can charge about 80% of its battery capacity in less than 10 minutes. This is comparable to refueling a conventional car with an internal combustion engine. Infineon helps bring energy-efficient DC fast-charging designs to life. Benefit from a comprehensive, ready-to-implement one-stop product and design portfolio that covers the entire product range from power conversion, microcontrollers, security, auxiliary power supply, and communication.

Experience the Difference in Power

Infineon is the leader in the power semiconductor market. With more than 20 years of experience and as the innovator of the revolutionary CoolMOS™ super junction MOSFET technology, Infineon continues pioneering in the power management field. Customers can select based on individual design/system requirements from the industry's broadest silicon-based SJ MOSFET portfolio. As one of the few manufacturers mastering all three main power technologies, Infineon complements this assortment with a groundbreaking wide bandgap (WBG) offering. This offering comprises silicon-carbide-based CoolSiC™ MOSFETs, matching diodes, and gallium-nitride-based CoolGaN™ e-mode HEMTs. Solutions are available, ranging from exceptional price performance through unrivaled robustness to best-in-class devices. This enables customers to build more efficient, environmentally friendly, sustainable applications.

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