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S29GL01GS10TFI020

Name: Infineon S29GL01GS10TFI020
Brand: Infineon Technologies
SKU: 797-S29GL01GS10TFI02
Price: 10.74 EUR
Availability: InStock

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Mouser No:

797-S29GL01GS10TFI02

Mfr. No:

S29GL01GS10TFI020

Mfr.:

Infineon Technologies

Description:

NOR Flash 1G 3V 100ns Parallel NOR Flash

Datasheet:

S29GL01GS10TFI020 Datasheet (PDF)

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Learn more about Infineon Technologies S29GL01GS10TFI020

In Stock: 1.562

Stock:: 1.562 Can Dispatch Immediately

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Factory Lead Time:: 3 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	10,74 €	10,74 €
	10,23 €	102,30 €
	8,45 €	211,25 €
	8,16 €	408,00 €
	7,98 €	798,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	NOR Flash
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	TSOP-56
Series:	S29GL01G/512/256/128S
Memory Size:	1 Gbit
Supply Voltage - Min:	2.7 V
Supply Voltage - Max:	3.6 V
Active Read Current - Max:	60 mA
Interface Type:	Parallel
Organisation:	64 M x 16
Data Bus Width:	16 bit
Timing Type:	Asynchronous
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 85 C
Packaging:	Tray
Brand:	Infineon Technologies
Country of Assembly:	TH
Country of Diffusion:	CN
Country of Origin:	CN
Moisture Sensitive:	Yes
Product Type:	NOR Flash
Speed:	100 ns
Factory Pack Quantity:	910
Subcategory:	Memory & Data Storage
Tradename:	MirrorBit
Unit Weight:	17,327 g

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Datasheet

S29GL01GS10TFI020 Datasheet (PDF)

Statement Regarding the RoHS Compliance of Cypress Products

TARIC:: 8542326100
CNHTS:: 8542329090
CAHTS:: 8542320040
USHTS:: 8542320051
JPHTS:: 8542320312
KRHTS:: 8542321040
MXHTS:: 8542320299
ECCN:: 3A991.b.1.a

MIRRORBIT™ NOR GL Flash Memory Device

Infineon Technologies MIRRORBIT™ NOR GL Flash Memory Devices include the 100ns access speeds. This additional offering of Cypress MIRRORBIT NOR GL Flash Memory now provides the fastest access times in the high-density versions available. MIRRORBIT NOR GL Flash Memory Devices are ideal for today's embedded applications that require higher density, better performance, and lower power consumption. Cypress MIRRORBIT GL NOR Flash family is optimized for various embedded applications' voltage, density, cost-per-bit, reliability, performance, and scalability needs. With densities from 32MB to 2GB, each MIRRORBIT NOR GL Flash Memory Device requires only a 3.0V power supply for reading and writing functions and is entirely command set compatible with the JEDEC Flash standards. The Cypress MIRRORBIT GL Flash Memory Device family supports Cypress' Universal Footprint, which provides one footprint across all densities, product families, and process technologies, allowing manufacturers to design a single platform and simply scale Flash memory capacity up or down, depending on the features and functionality of the target end system.

S29GL01G/512/256/128S MIRRORBIT™ Flash Memory

Infineon Technologies S29GL01G/512/256/128S MIRRORBIT™ Eclipse Flash Memory is optimized for voltage, density, cost-per-bit, reliability, performance, and scalability needs. With densities from 32MB-2GB, each MIRRORBIT Memory Device requires only a single 3.0V power supply for read and write functions. The entire command set is compatible with the JEDEC Flash standards. The MIRRORBIT GL Flash Memory Device family supports Universal Footprint, which provides one footprint across all densities. The flash memory also supports product families and process technologies. This allows manufacturers to design single platform and simple scale Flash memory capacity up or down, depending on features and functionality.

S29 GL-S MIRRORBIT™ Eclipse™ Flash

Infineon Technologies S29 GL-S MIRRORBIT™ Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MIRRORBIT Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. Infineon S29 GL-S MIRRORBIT Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.