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SPB80P06P G

Name: Infineon SPB80P06P G
Brand: Infineon Technologies
SKU: 726-SPB80P06PG
Price: 1.56 EUR
Availability: OutOfStock

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Mouser No:

726-SPB80P06PG

Mfr. No:

SPB80P06P G

Mfr.:

Infineon Technologies

Datasheet:

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Minimum: 1000 Multiples: 1000

Unit Price:

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Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 1000)
	1,56 €	1.560,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	80 A
Rds On - Drain-Source Resistance:	23 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.1 V
Qg - Gate Charge:	115 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	340 W
Channel Mode:	Enhancement
Tradename:	SIPMOS
Packaging:	Reel
Brand:	Infineon Technologies
Configuration:	Single
Country of Assembly:	MX
Country of Diffusion:	AT
Country of Origin:	AT
Fall Time:	30 ns
Forward Transconductance - Min:	18 S
Product Type:	MOSFETs
Rise Time:	18 ns
Series:	SPB80P06
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	56 ns
Typical Turn-On Delay Time:	24 ns
Part # Aliases:	SPB8P6PGXT SP000096088 SPB80P06PGATMA1
Unit Weight:	4 g