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PCDH30120CCG1_T0_00601

Name: Panjit PCDH30120CCG1_T0_00601
Brand: Panjit
SKU: 241-PCDH3012CG1T0601
Price: 16.37 EUR
Availability: InStock

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Mouser No:

241-PCDH3012CG1T0601

Mfr. No:

PCDH30120CCG1_T0_00601

Mfr.:

Panjit

Description:

SiC Schottky Diodes 1200V SiC Schottky Barrier Diode

Datasheet:

PCDH30120CCG1_T0_00601 Datasheet (PDF)

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In Stock: 1.500

Stock:: 1.500 Can Dispatch Immediately

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Factory Lead Time:: 35 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 1500 will be subject to minimum order requirements.

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Minimum: 1 Multiples: 1

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	16,37 €	16,37 €
	10,69 €	106,90 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Panjit
Product Category:	SiC Schottky Diodes
RoHS:
Packaging:	Tube
Brand:	Panjit
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Product Type:	SiC Schottky Diodes
Factory Pack Quantity:	30
Subcategory:	Diodes & Rectifiers
Unit Weight:	6,231 g

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Datasheet

PCDH30120CCG1_T0_00601 Datasheet (PDF)

PCN

Product Change Notification (PDF)

TARIC:: 8541100000
CAHTS:: 8541100090
USHTS:: 8541100080
ECCN:: EAR99

650V N-Channel Super Junction MOSFETs

Panjit 650V N-Channel Super Junction MOSFETs feature a low R_DS(ON) and high-speed switching in an ITO-220AB-F package. The 650V MOSFETs support an R_DS(ON) of 280mΩ, 380mΩ, 600mΩ, or 900mΩ. In addition, the MOSFETs provide a 4.7A, 7.3A, 10.6A, or 13.8A current. The 100% avalanche and Rg tested Panjit 650V N-Ch Super Junction MOSFETs offer ease of use.

SiC Schottky Barrier Diodes

PANJIT SiC Schottky Barrier Diodes provide zero reverse recovery current, low forward voltage drop, and temperature-independent switching behavior. The devices have a high surge current capability, and excellent thermal performance. Silicon carbide technology provides lower conduction losses. The diodes can deliver stability and high ruggedness throughout -55°C to +175°C operating temperature range.