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SCT027HU65G3AG

Name: STMicroelectronics SCT027HU65G3AG
Brand: STMicroelectronics
SKU: 511-SCT027HU65G3AG
Price: 11.63 EUR
Availability: OutOfStock

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Mouser No:

511-SCT027HU65G3AG

Mfr. No:

SCT027HU65G3AG

Mfr.:

STMicroelectronics

Description:

SiC MOSFETs Automotive-grade silicon carbide Power MOSFET 650 V, 29 mOhm typ., 60 A

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Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

SCT027HU65G3AG Datasheet (PDF)

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Stock:: 0

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Factory Lead Time:: 22 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	11,63 €	11,63 €
	8,68 €	86,80 €
	7,51 €	751,00 €
Full Reel (Order in multiples of 600)
	6,64 €	3.984,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	SiC MOSFETs
RoHS:
Qualification:	AEC-Q100
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	JP
Packaging:	Reel
Packaging:	Cut Tape
Product Type:	SiC MOSFETS
Factory Pack Quantity:	600
Subcategory:	Transistors

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Datasheet

SCT027HU65G3AG Datasheet (PDF)

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Silicon Carbide Power MOSFETs

STMicroelectronics Silicon Carbide Power MOSFETs bring wide bandgap materials' advanced efficiency and reliability to a broader range of energy-conscious applications. These applications include inverters for electric/hybrid vehicles, solar or wind power generation, high-efficiency drives, power supplies, and smart-grid equipment. An extended voltage range from 650V to 1700V features excellent switching performance combined with very low on-state resistance R_DS(on) per area Figure Of Merit. ST SiC MOSFETs allow the design of more efficient and compact systems. The STMicro 1200V SiC MOSFETs exhibit an outstanding temperature rating of 200°C for improved thermal design of power electronics systems. Compared to silicon MOSFET, SiC MOSFET also features significantly reduced switching losses with minimal variation versus the temperature.