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SGT65R65AL

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Mouser No:

511-SGT65R65AL

Mfr. No:

SGT65R65AL

Mfr.:

STMicroelectronics

Description:

GaN FETs 650 V, 49 mOhm typ., 25 A, e-mode PowerGaN transistor

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Datasheet:

SGT65R65AL Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	GaN FETs
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	PowerFLAT-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	25 A
Rds On - Drain-Source Resistance:	65 mOhms
Vgs - Gate-Source Voltage:	+ 6 V
Vgs th - Gate-Source Threshold Voltage:	1.8 V
Qg - Gate Charge:	5.4 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	305 W
Brand:	STMicroelectronics
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Moisture Sensitive:	Yes
Packaging:	Reel
Product Type:	GaN FETs
Series:	SGT
Factory Pack Quantity:	3000
Subcategory:	Transistors
Technology:	GaN-on-Si
Transistor Type:	E-Mode
Type:	RF Power MOSFET
Unit Weight:	76 mg

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Datasheet

SGT65R65AL Datasheet (PDF)

Application Notes

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
MXHTS:: 8541299900
ECCN:: EAR99

SGT G-HEMT™ E-Mode PowerGaN Transistors

STMicroelectronics SGT G-HEMT™ E-Mode PowerGaN Transistors are high‑performance, enhancement‑mode (normally‑off) GaN devices designed to deliver exceptionally fast switching, low conduction losses, and high power density across demanding power‑conversion applications. These transistors leverage Gallium Nitride’s wide‑bandgap advantages to achieve extremely low capacitances, minimal gate charge, and zero reverse‑recovery charge, enabling superior efficiency compared to traditional silicon power switches.

SGT65R65AL e-mode PowerGaN Transistors

STMicroelectronics SGT65R65AL e-mode PowerGaN Transistors are 650V, 25A transistors combined with well-established packaging technology. The STMicroelectronics SGT65R65AL has a resulting G-HEMT device that provides extremely low conduction losses, high current capability, and ultra-fast switching operation. The device can enable high power density and unbeatable efficiency performances.