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SSM3K335R,LF

Name: Toshiba SSM3K335R,LF
Brand: Toshiba
SKU: 757-SSM3K335RLF
Price: 0.38 EUR
Availability: InStock

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See Product Specifications

Mouser No:

757-SSM3K335RLF

Mfr. No:

SSM3K335R,LF

Mfr.:

Toshiba

Description:

MOSFETs N-Ch U-MOSVI FET ID 6A 30VDSS 340pF

Datasheet:

SSM3K335R,LF Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba SSM3K335R,LF

In Stock: 18.000

Stock:: 18.000

Can Dispatch Immediately

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On Order:: 18.000
Factory Lead Time:: 14

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 3000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,387 €	0,39 €
	0,233 €	2,33 €
	0,147 €	14,70 €
	0,11 €	55,00 €
	0,089 €	89,00 €
Full Reel (Order in multiples of 3000)
	0,085 €	255,00 €
	0,077 €	462,00 €
	0,068 €	612,00 €
	0,063 €	1.512,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	SOT-23-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	6 A
Rds On - Drain-Source Resistance:	56 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.5 V
Qg - Gate Charge:	2.7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1 W
Channel Mode:	Enhancement
Qualification:	AEC-Q100
Tradename:	U-MOSVII-H
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Configuration:	Single
Country of Assembly:	TH
Country of Diffusion:	JP
Country of Origin:	TH
Product Type:	MOSFETs
Series:	SSM3K335
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Unit Weight:	8 mg

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Attributes selected: 0

                        
Toshiba Electronic Devices & Storage Corporation Automotive products 
may be used as engineering samples, however; they are not intended for 
volume automotive production or reliability testing without prior 
approval by Toshiba Semiconductor and Storage. 
Please contact a Mouser Technical Sales Representative for 
further assistance.
5-0320-2

Filter Document:

Datasheet

SSM3K335R,LF Datasheet (PDF)

Application Notes

Surface Mount Small Signal MOSFET Precautions For Use

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

U-MOSVI Small Signal MOSFETs

Toshiba U-MOSVI Small Signal MOSFETs offer a variety of gate drive voltages required for many different types of mobile devices. They are available in single, dual, N-channel, P-channel and various voltage versions, providing a wide variety of options for designers. Each MOSFET addresses the need to support high-current charging with low voltage and low R_DS(on) requirements. The compact packages and and low voltage operation make Toshiba U-MOSVI Small Signal MOSFETs an ideal solution for high-density packaging requirements in smart phones and game consoles.

U-MOSVII-H MOSFETs

Toshiba U-MOSVII-H MOSFETs are logic-level gate drive and low-voltage gate drive devices offered in both single-channel and dual-channel variants. These devices have a drain-source voltage range of 12V to 60V and a continuous drain current range from 0.15m to 9.0A. Toshiba U-MOSVII-H MOSFETs are offered in a wide range of compact, surface-mounted package types, making them ideal for high-density applications.