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C3M0160120D

Name: Wolfspeed C3M0160120D
Brand: Wolfspeed
SKU: 941-C3M0160120D
Price: 5.78 EUR
Availability: OutOfStock

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Mouser No:

941-C3M0160120D

Mfr. No:

C3M0160120D

Mfr.:

Wolfspeed

Description:

SiC MOSFETs SiC, MOSFET, 160mO, 1200V, TO-247-3, Industrial

Datasheet:

C3M0160120D Datasheet

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Factory Lead Time:: 22 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	5,78 €	5,78 €
	3,75 €	37,50 €
	3,14 €	376,80 €
	2,99 €	1.524,90 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Wolfspeed
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	17 A
Rds On - Drain-Source Resistance:	160 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 19 V
Vgs th - Gate-Source Threshold Voltage:	3.6 V
Qg - Gate Charge:	38 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	97 W
Channel Mode:	Enhancement
Brand:	Wolfspeed
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Packaging:	Tube
Product Type:	SiC MOSFETS
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Unit Weight:	6 g

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Datasheet

C3M0160120D Datasheet

PCN

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CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

1200V Silicon Carbide Power MOSFETs

Wolfspeed 1200V Silicon Carbide Power MOSFETs set the standard for performance, ruggedness and ease of design. Wolfspeed MOSFETs feature fast switching and low switching loss capabilities, ensuring significant improvement in system efficiency, power density and overall BOM cost compared to silicon MOSFET and IGBT incumbents.

Silicon Carbide 1200V MOSFETs & Diodes

Wolfspeed Silicon Carbide (SiC) 1200V MOSFETs and Diodes create a powerful combination of higher efficiency in demanding applications. These MOSFETs and Schottky diodes are designed for high-power applications. The 1200V SiC MOSFETs feature stable Rds(on) over-temperature and avalanche ruggedness. These MOSFETs are rugged body diodes that do not require external diodes and are easier to drive as these offer a 15V gate drive. The 1200V SiC MOSFETs improve system-level efficiency, lower switching and conduction losses, and improve system-level power density.

Z-Rec Zero Recovery SiC Diodes

Wolfspeed Z-Rec™ Zero Recovery Silicon Carbide Schottky Diodes are 1200V, 650V, or 600V Schottky rectifiers with a zero reverse recovery current. With high-frequency operation and temperature-independent switching behavior, Wolfspeed Z-Rec Zero Recovery Rectifiers provide extremely fast switching with virtually no switching losses and the ability to parallel devices without thermal runaway, reducing heat sink requirements. The unipolar diodes can replace bipolar rectifiers and are helpful in switch-mode power supplies, power factor correction, and motor drives.

Silicon Carbide (SiC) Schottky Diodes

Wolfspeed Silicon Carbide (SiC) Schottky Diodes are optimized for high-performance power electronics applications, including server power supplies, electric vehicle charging systems, energy storage systems, solar (PV) inverters, industrial power supplies, and consumer electronics. Compared to silicon-based solutions, Wolfspeed Silicon Carbide technology enables increased system power density, higher switching frequencies, smaller designs, cooler components, reduced size of components like inductors, capacitors, filters, and transformers, and overall cost benefits. Wolfspeed SiC diodes feature the MPS (Merged PiN Schottky) design, which is more robust and reliable than standard Schottky barrier diodes. Wolfspeed's portfolio of SiC Schottky diodes come in various packages to meet diverse application requirements.