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BUK7Y1R0-40NX

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See Product Specifications

Mouser No:

771-BUK7Y1R0-40NX

Mfr. No:

BUK7Y1R0-40NX

Mfr.:

Nexperia

Description:

MOSFETs BUK7Y1R0-40N/SOT669/LFPAK

Datasheet:

BUK7Y1R0-40NX Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Nexperia BUK7Y1R0-40NX

Delivery Restriction:

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	MOSFETs
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	Power-SO8-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	40 V
Id - Continuous Drain Current:	320 A
Rds On - Drain-Source Resistance:	970 uOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.6 V
Qg - Gate Charge:	135 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	268 W
Channel Mode:	Enhancement
Brand:	Nexperia
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Fall Time:	58 ns
Product Type:	MOSFETs
Rise Time:	49 ns
Factory Pack Quantity:	1500
Subcategory:	Transistors
Transistor Type:	Enhanced-Trench Bottom Oxide (e-TBO) MOSFET
Typical Turn-Off Delay Time:	79 ns
Typical Turn-On Delay Time:	25 ns
Part # Aliases:	934666555115

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Filter Document:

Datasheet

BUK7Y1R0-40NX Datasheet (PDF)

Application Notes

Power MOSFET Single-Shot and Repetitive Avalanche Ruggedness Rating - June 20, 2022 (PDF)

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

BUK7Y1R0-40N & BUK7Y3R1-80M N-Channel MOSFETs

Nexperia BUK7Y1R0-40N and BUK7Y3R1-80M N-Channel MOSFETs are designed and qualified to meet AEC-Q101 requirements, delivering high performance and endurance. These MOSFETs offer fast and efficient switching with optimal damping and low spiking. The BUK7Y1R0-40N and BUK7Y3R1-80M N-channel MOSFETs are encapsulated within LFPAK56 packages. The BUK7Y1R0-40N N-channel MOSFET utilizes the Trench 15 low-ohmic enhanced-Trench Bottom Oxide (e-TBO) technology, while the BUK7Y3R1-80M employs the Trench 14 low-ohmic split-gate technology. These N-channel MOSFETs are EU RoHS-compliant and feature a 175°C maximum junction temperature range. Typical applications include motors, lighting, and solenoid control, 12V automotive systems, and ultra-high-performance power switching.