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DXTN78060DFGQ-7

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See Product Specifications

Mouser No:

621-DXTN78060DFGQ-7

Mfr. No:

DXTN78060DFGQ-7

Mfr.:

Diodes Incorporated

Description:

Bipolar Transistors - BJT Pwr Low Sat Transistor PowerDI3333-8/SWP T&R 2K

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

DXTN78060DFGQ-7 Datasheet (PDF)

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More Information

Learn more about Diodes Incorporated DXTN78060DFGQ-7

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	Bipolar Transistors - BJT
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerVDFN-8
Transistor Polarity:	NPN
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	60 V
Collector- Base Voltage VCBO:	100 V
Emitter- Base Voltage VEBO:	8 V
Collector-Emitter Saturation Voltage:	135 mV
Pd - Power Dissipation:	2.4 W
Gain Bandwidth Product fT:	250 MHz
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Qualification:	AEC-Q101
Series:	DXTN
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Diodes Incorporated
Continuous Collector Current:	6 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
DC Current Gain hFE Max:	550 at 100 mA
Product Type:	BJTs - Bipolar Transistors
Factory Pack Quantity:	2000
Subcategory:	Transistors

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Datasheet

DXTN78060DFGQ-7 Datasheet (PDF)

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

DXTN/P 78Q & 80Q Bipolar Transistors

Diodes Incorporated DXTN/P 78Q and 80Q Bipolar Transistors offer 30V, 60V, and 100V ratings, deliver exceptional conduction efficiency and thermal performance for demanding automotive power switching and control. The ultra-low V_CE(SAT) NPN and PNP bipolar transistors are ideal for 12V, 24V, and 48V systems, supporting applications such as MOSFET and IGBT gate driving, load switching, LDO regulation, DC-DC conversion, and motor/actuator control.