It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

DXTN80060DFGQ-7

Images are for reference only
See Product Specifications

Mouser No:

621-DXTN80060DFGQ-7

Mfr. No:

DXTN80060DFGQ-7

Mfr.:

Diodes Incorporated

Description:

Bipolar Transistors - BJT Pwr Low Sat Transistor PowerDI3333-8/SWP T&R 2K

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

DXTN80060DFGQ-7 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Diodes Incorporated DXTN80060DFGQ-7

Delivery Restriction:

Mouser does not presently sell this product in your region.

Availability

Stock:: An unexpected error occurred. Please try again later.

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	Bipolar Transistors - BJT
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	PowerVDFN-8
Transistor Polarity:	NPN
Configuration:	Single
Collector- Emitter Voltage VCEO Max:	60 V
Collector- Base Voltage VCBO:	100 V
Emitter- Base Voltage VEBO:	8 V
Collector-Emitter Saturation Voltage:	100 mV
Pd - Power Dissipation:	2.4 W
Gain Bandwidth Product fT:	140 MHz
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Qualification:	AEC-Q101
Series:	DXTN
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Diodes Incorporated
Continuous Collector Current:	6.5 A
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
DC Current Gain hFE Max:	550 at 100 mA
Product Type:	BJTs - Bipolar Transistors
Factory Pack Quantity:	2000
Subcategory:	Transistors

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

DXTN80060DFGQ-7 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290055
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

DXTN80x NPN Bipolar Transistors

Diodes Incorporated DXTN80x NPN Bipolar Transistors offer a small form factor, thermally efficient PowerDI^® 3333-8 package, allowing higher-density end products. The devices supply a >30V, 60V, or 100V collector-emitter voltage and a >8V emitter-base voltage. The DXTN80x is ideal for high-temperature environments, with a temperature rating of +175°C. The Diodes Inc. DXTN80x NPN bipolar transistors are excellent for motors, solenoids, relays, and actuator driver controls.

DXTN/P 78Q & 80Q Bipolar Transistors

Diodes Incorporated DXTN/P 78Q and 80Q Bipolar Transistors offer 30V, 60V, and 100V ratings, deliver exceptional conduction efficiency and thermal performance for demanding automotive power switching and control. The ultra-low V_CE(SAT) NPN and PNP bipolar transistors are ideal for 12V, 24V, and 48V systems, supporting applications such as MOSFET and IGBT gate driving, load switching, LDO regulation, DC-DC conversion, and motor/actuator control.