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FP75R12N2T7BPSA2

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Mouser No:

726-FP75R12N2T7BPSA2

Mfr. No:

FP75R12N2T7BPSA2

Mfr.:

Infineon Technologies

Description:

IGBT Modules 1200 V, 75 A PIM IGBT module

Datasheet:

FP75R12N2T7BPSA2 Datasheet (PDF)

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	IGBT Modules
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Product:	IGBT Silicon Modules
Configuration:	3-Phase Inverter
Collector- Emitter Voltage VCEO Max:	1.2 kV
Collector-Emitter Saturation Voltage:	1.55 V
Continuous Collector Current at 25 C:	75 A
Gate-Emitter Leakage Current:	100 nA
Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 175 C
Packaging:	Tray
Brand:	Infineon Technologies
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	AT
Product Type:	IGBT Modules
Factory Pack Quantity:	15
Subcategory:	IGBTs
Technology:	Si
Part # Aliases:	FP75R12N2T7 SP005597318 FP75R12N2T7BPSA1

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Datasheet

FP75R12N2T7BPSA2 Datasheet (PDF)

TARIC:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
MXHTS:: 8541210100
ECCN:: EAR99

1200V PIM 3 Phase Input Rectifiers

Infineon Technologies 1200V PIM 3 Phase Input Rectifiers are EconoPIM™ 2 1200V, 100A three-phase PIM IGBT modules. The rectifiers feature TRENCHSTOP™ IGBT7, Emitter Controlled 7 diode and NTC. The PIM (Power Integrated Modules) with the integration of rectifier and brake chopper enables system cost savings.