IRL540NSTRLPBF

Infineon Technologies
942-IRL540NSTRLPBF
IRL540NSTRLPBF

Mfr.:

Description:
MOSFETs MOSFT 100V 36A 44mOhm 49.3nC LogLvl

ECAD Model:
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In Stock: 439

Stock:
439 Can Dispatch Immediately
Factory Lead Time:
15 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 800)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
2,25 € 2,25 €
1,45 € 14,50 €
1,01 € 101,00 €
Full Reel (Order in multiples of 800)
0,753 € 602,40 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
Infineon
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
TO-262-3
Brand: Infineon Technologies
Channel Mode: Enhancement
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Id - Continuous Drain Current: 36 A
Maximum Operating Temperature: + 175 C
Minimum Operating Temperature: - 55 C
Mounting Style: SMD/SMT
Number of Channels: 1 Channel
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Pd - Power Dissipation: 3.8 W
Product Type: MOSFETs
Qg - Gate Charge: 49.3 nC
Rds On - Drain-Source Resistance: 63 mOhms
Factory Pack Quantity: 800
Subcategory: Transistors
Technology: Si
Transistor Polarity: N-Channel
Transistor Type: 1 N-Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Vgs - Gate-Source Voltage: - 16 V, 16 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Unit Weight: 4 g
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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
MXHTS:
8541299900
ECCN:
EAR99

IRF540N/Z Advanced HEXFET® Power MOSFETs

Infineon IRF540N/Z Advanced HEXFET® Power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed, ruggedized device design, and 175°C junction operating temperature that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.