MMBT5551W_R1_00701

Panjit
241-MMBT5551WR100701
MMBT5551W_R1_00701

Mfr.:

Description:
Bipolar Transistors - BJT NPN HIGH VOLTAGE TRANSISTOR

Datasheet:
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In Stock: 29.441

Stock:
29.441 Can Dispatch Immediately
Factory Lead Time:
8 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
0,146 € 0,15 €
0,087 € 0,87 €
0,054 € 5,40 €
0,04 € 20,00 €
0,034 € 34,00 €
Full Reel (Order in multiples of 3000)
0,028 € 84,00 €
0,025 € 150,00 €
0,021 € 189,00 €
0,019 € 456,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
Panjit
Product Category: Bipolar Transistors - BJT
RoHS:  
Si
SMD/SMT
SOT-323-3
NPN
Single
160 V
180 V
6 V
200 mV
200 mW
300 MHz
- 55 C
+ 150 C
Reel
Cut Tape
MouseReel
Brand: Panjit
Continuous Collector Current: 600 mA
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: TW
DC Collector/Base Gain hFE Min: 80 V at 10 mA, 5 V
DC Current Gain hFE Max: 250 V at 10 mA, 5 V
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 3000
Subcategory: Transistors
Unit Weight: 5 mg
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Attributes selected: 0

Datasheet

TARIC:
8541210000
CNHTS:
8541210000
CAHTS:
8541210000
USHTS:
8541210075
JPHTS:
854121000
KRHTS:
8541219000
MXHTS:
8541210100
ECCN:
EAR99

MMBT5551W NPN Silicon High-Voltage Transistors

PANJIT MMBT5551W NPN Silicon High-Voltage Transistors offer a collector-emitter voltage (VCE) of 160V and a collector current (IC) rating of 600mA. The PANJIT MMBT5551W is suitable for a wide range of electronic applications. This transistor is environmentally friendly, lead-free, and complies with EU RoHS 2.0 regulations. Additionally, it features a green molding compound that meets the IEC 61249 standard.

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