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NSF040120L4A1Q

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See Product Specifications

Mouser No:

771-NSF040120L4A1Q

Mfr. No:

NSF040120L4A1Q

Mfr.:

Nexperia

Description:

SiC MOSFETs NSF040120L4A1/SOT8071/TO247-4L

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NSF040120L4A1Q Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Nexperia NSF040120L4A1Q

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	SiC MOSFETs
Delivery Restriction:	Mouser does not presently sell this product in your region.
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	53 A
Rds On - Drain-Source Resistance:	60 mOhms
Vgs - Gate-Source Voltage:	- 10 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	2.9 V
Qg - Gate Charge:	81 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	234 W
Channel Mode:	Enhancement
Brand:	Nexperia
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	7 ns
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	20 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	Si
Transistor Type:	1 N-Channel
Type:	SiC MOSFET
Typical Turn-Off Delay Time:	20 ns
Typical Turn-On Delay Time:	16 ns
Part # Aliases:	934668741127 934670000000

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Datasheet

NSF040120L4A1Q Datasheet (PDF)

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

1200V SiC MOSFETs

Nexperia 1200V SiC MOSFETs are housed in 3-pin TO-247-3 and 4-pin TO-247-4 for through-hole PCB mounting. The Nexperia MOSFETs are ideal for high-power and high-voltage industrial applications thanks to excellent temperature stability and fast switching speed. These applications include E-vehicle charging infrastructures, photovoltaic inverters, and motor drives.