It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

Return to Search Results

See an Error?

NVMYS3D3N06CLTWG

Name: onsemi NVMYS3D3N06CLTWG
Brand: onsemi
SKU: 863-NVMYS3D3N06CLTWG
Price: 2 EUR
Availability: Discontinued

Images are for reference only
See Product Specifications

Mouser No:

863-NVMYS3D3N06CLTWG

Mfr. No:

NVMYS3D3N06CLTWG

Mfr.:

onsemi

Description:

MOSFETs 60V 3mOhm 133A Single N-Channel

Lifecycle:

NRND:

Not recommended for new designs.

Datasheet:

NVMYS3D3N06CLTWG Datasheet

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about onsemi NVMYS3D3N06CLTWG

Availability

Stock:: 0

You can still purchase this product for backorder.

An unexpected error occurred. Please try again later.
Factory Lead Time:: 46 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,00 €	2,00 €
	1,29 €	12,90 €
	0,877 €	87,70 €
	0,807 €	403,50 €
	0,683 €	683,00 €
Full Reel (Order in multiples of 3000)
	0,637 €	1.911,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	LFPAK-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	133 A
Rds On - Drain-Source Resistance:	3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	40.7 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	100 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Packaging:	Reel
Packaging:	Cut Tape
Brand:	onsemi
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Fall Time:	96 ns
Forward Transconductance - Min:	130 S
Product Type:	MOSFETs
Rise Time:	58 ns
Series:	NVMYS3D3N06CL
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	66 ns
Typical Turn-On Delay Time:	15 ns
Unit Weight:	75 mg

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

NVMYS3D3N06CLTWG Datasheet

PCN

Product Change Notification 2024-06-12 (PDF)

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

Trench6 N-Channel MV MOSFETs

onsemi Trench6 N-Channel MV MOSFETs are 30V, 40V, and 60V MOSFETs produced using an advanced Power Trench process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.

LFPAK4 Automotive N-Channel Power MOSFETs

onsemi LFPAK4 Automotive N-Channel Power MOSFETs are AEC-Q101-qualified, single N-channel MOSFETs with a small 5mm x 6mm footprint, ideal for compact designs. These devices feature a low drain-to-source on-resistance to minimize conduction losses and low gate charge and capacitance to minimize driver losses. These automotive-grade power MOSFETs are Pb-free, RoHS-compliant, and feature a wide -55°C to +175°C operating temperature range.