V10170C-M3/4W

Vishay Semiconductors
78-V10170C-M3/4W
V10170C-M3/4W

Mfr.:

Description:
Schottky Diodes & Rectifiers 10A 170V TrenchMOS

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Availability

Stock:
Non-Stocked
Factory Lead Time:
Minimum: 8000   Multiples: 1000
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
0,719 € 5.752,00 €

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: Schottky Diodes & Rectifiers
RoHS:  
REACH - SVHC:
Schottky Rectifiers
Through Hole
TO-220-3
Dual Anode Common Cathode
Si
10 A
170 V
840 mV
80 A
90 uA
- 40 C
+ 175 C
Tube
Brand: Vishay Semiconductors
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: CN
Product Type: Schottky Diodes & Rectifiers
Factory Pack Quantity: 1000
Subcategory: Diodes & Rectifiers
Tradename: TMBS
Vr - Reverse Voltage: 170 V
Unit Weight: 1,870 g
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Attributes selected: 0

TARIC:
8541100000
CNHTS:
8504409190
CAHTS:
8541100090
USHTS:
8541100080
JPHTS:
854110090
KRHTS:
8541109000
MXHTS:
8541100101
ECCN:
EAR99

170V TMBS Trench MOS Barrier Schottky Rectifiers

Vishay General Semiconductor 170V TMBS Trench MOS Barrier Schottky Rectifiers feature a wide range of current ratings from 10A to 80A in the power TO-220AB, TO-263AB, and TO-3PW packages. With low forward voltage drops down to 0.65V typical at 30A, these Vishay General Semiconductor rectifiers are designed for telecom power supplies.

eSMP® SMPA Schottky Rectifiers

Vishay General Semiconductors eSMP® SMPA Schottky Rectifiers are a patented Trench MOS Barrier Schottky (TMBS®) rectifiers that are available with seven voltage ratings from 45V to 200V and several different package options to serve a wide range of system requirements. TMBS offers several advantages over planar Schottky rectifiers. As operating voltage moves to 45V and above, planar Schottky rectifiers tend to lose their advantage of fast switching speeds and low forward voltage drop to a substantial degree. The Vishay General Semiconductors patented TMBS structure addresses this issue by diminishing minority carrier injections to the drift region, thus minimizing stored charges and improving switching speeds.