It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

FS17MR12W2M1HB11ABPSA2

Name: Infineon FS17MR12W2M1HB11ABPSA2
Brand: Infineon Technologies
SKU: 726-FS17MR12W2M1HB11
Price: 122.53 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

726-FS17MR12W2M1HB11

Mfr. No:

FS17MR12W2M1HB11ABPSA2

Mfr.:

Infineon Technologies

Description:

MOSFET Modules EasyPACK 2B module with CoolSiC Trench MOSFET and PressFIT / NTC

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

FS17MR12W2M1HB11ABPSA2 Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Infineon Technologies FS17MR12W2M1HB11ABPSA2

In Stock: 29

Stock:: 29

Can Dispatch Immediately

An unexpected error occurred. Please try again later.
On Order:: 30
Factory Lead Time:: 13

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

This Product Ships FREE

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	122,53 €	122,53 €
	102,40 €	1.024,00 €
	94,02 €	9.872,10 €
510	Quote

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFET Modules
RoHS:
Technology:	Si
Mounting Style:	Press Fit
Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	40 A
Vgs - Gate-Source Voltage:	- 10 V, 23 V
Vgs th - Gate-Source Threshold Voltage:	5.15 V
Pd - Power Dissipation:	20 mW
Series:	EasyPACK 2B
Packaging:	Tray
Brand:	Infineon Technologies
Configuration:	Hex
Country of Assembly:	DE
Country of Diffusion:	Not Available
Country of Origin:	AT
Fall Time:	12 ns
Height:	1.4 mm
If - Forward Current:	16 A
Length:	56.7 mm
Product:	MOSFET Modules
Product Type:	MOSFET Modules
Rise Time:	29 ns
Factory Pack Quantity:	15
Subcategory:	Discrete and Power Modules
Tradename:	CoolSiC
Typical Turn-Off Delay Time:	39 ns
Typical Turn-On Delay Time:	32 ns
Vf - Forward Voltage:	4.2 V
Width:	48 mm
Part # Aliases:	FS17MR12W2M1H_B11_A SP005958141

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

FS17MR12W2M1HB11ABPSA2 Datasheet (PDF)

This functionality requires JavaScript to be enabled.

TARIC:: 8541210000
CAHTS:: 8541210000
USHTS:: 8541210095
JPHTS:: 854121000
MXHTS:: 8541210100
ECCN:: EAR99

1200V CoolSiC™ Modules

Infineon Technologies 1200V CoolSiC™ Modules are Silicon Carbide (SiC) MOSFET modules that offer good levels of efficiency and system flexibility. These modules come with Near Threshold Circuits (NTC) and PressFIT contact technology. The CoolSiC modules feature high current density, best in class switching and conduction losses, and low inductive design. These modules provide high-frequency operation, increased power density, and optimized development cycle time and cost.

1200V CoolSiC™ M1H Modules

Infineon Technologies 1200V CoolSiC™ M1H Modules offer EV Charging and other inverter designers opportunities to achieve never-before-seen efficiency and power density levels.