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BUK9Q50-100LJ

Name: Nexperia BUK9Q50-100LJ
Brand: Nexperia
SKU: 771-BUK9Q50-100LJ
Price: 0.86 EUR
Availability: InStock

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See Product Specifications

Mouser No:

771-BUK9Q50-100LJ

Mfr. No:

BUK9Q50-100LJ

Mfr.:

Nexperia

Description:

MOSFETs BUK9Q50-100L/SOT8002/MLPAK33

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

BUK9Q50-100LJ Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Nexperia BUK9Q50-100LJ

In Stock: 360

Stock:: 360 Can Dispatch Immediately

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Factory Lead Time:: 53 Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	0,86 €	0,86 €
	0,618 €	6,18 €
	0,384 €	38,40 €
	0,265 €	132,50 €
	0,223 €	223,00 €
Full Reel (Order in multiples of 3000)
	0,20 €	600,00 €
	0,171 €	1.026,00 €
	0,159 €	1.431,00 €
	0,143 €	3.432,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	MOSFETs
RoHS:
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Nexperia
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Product Type:	MOSFETs
Factory Pack Quantity:	3000
Subcategory:	Transistors
Part # Aliases:	934670298118 934670000000

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Datasheet

BUK9Q50-100LJ Datasheet (PDF)

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

BUK9Q N-Channel Trench MOSFET

Nexperia BXK9Q29-60A N-Channel Trench MOSFET is an enhancement mode Field-Effect Transistor (FET) in a small SOT8002-3 (MLPAK33) SMD plastic package using Trench MOSFET technology. This N-channel MOSFET is logic-level compatible, fast switching, and fully automotive qualified to AEC-Q101 at 175°C. The BXK9Q29-60A trench MOSFET features a 60V maximum drain-source voltage, 84A maximum peak drain current, and 27W maximum total power dissipation. This N-channel MOSFET also features a 23.7mΩ typical drain-source on-state resistance, 25mJ maximum non-repetitive drain-source avalanche energy, and 15.8A maximum non-repetitive avalanche current. The BXK9Q29-60A trench MOSFET is EU/CN RoHS-compliant. Typical applications include LED lighting, switching circuits, and DC-DC conversion.