5112 SiC MOSFETs

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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
1.613In Stock
2.000On Order
Min.: 1
Mult.: 1
: 2.000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 168 A 13.1 mOhms - 7V, + 23 V 4.5 V 113 nC - 55 C + 175 C 681 W Enhancement CoolSiC
Infineon Technologies SiC MOSFETs SILICON CARBIDE MOSFET
Datasheet
More Info Available
MouseReel Available
Min.: 1
Mult.: 1
: 2.000

SMD/SMT HSOF-8 N-Channel 1 Channel 650 V 131 A 18 mOhms - 7 V to 23 V 4.5 V 148 nC - 55 C + 175 C 535 W Enhancement CoolSiC
WeEn Semiconductors WNSC2M25065R6Q
WeEn Semiconductors SiC MOSFETs WNSC2M25065R/TO247-4L/STANDARD MARKING * HORIZONTAL, RAIL PACK
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 480
Mult.: 240