7353 SiC MOSFETs

Results: 3
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Vds - Drain-Source Breakdown Voltage
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology 672In Stock
Min.: 1
Mult.: 1
: 750

1.2 kV
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology 712In Stock
Min.: 1
Mult.: 1
: 750

1.2 kV
Infineon Technologies SiC MOSFETs CoolSiC 1200 V SiC MOSFET G2 : Silicon Carbide MOSFET with top side cooling and .XT technology 333In Stock
Min.: 1
Mult.: 1
: 750

1.2 kV