IXTQ30N60 Series MOSFETs

Results: 2
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
IXYS MOSFETs 30 Amps 600V
Datasheet
More Info Available
Min.: 1
Mult.: 1

Si Through Hole TO-3P-3 N-Channel 1 Channel 600 V 30 A 240 mOhms - 20 V, 20 V 4.5 V 335 nC - 55 C + 150 C 540 W Enhancement Linear L2 Tube
IXYS MOSFETs 30.0 Amps 600 V 0.24 Ohm Rds
Datasheet
Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 30

Si Through Hole TO-3P-3 N-Channel 1 Channel 600 V 30 A 240 mOhms - 30 V, 30 V - 55 C + 150 C 540 W Enhancement Tube