New Discrete Semiconductors
Nexperia BXK9Q29-60A N-Channel Trench MOSFET is an enhancement mode Field-Effect Transistor (FET) in a small SOT8002-3 (MLPAK33) SMD plastic package using Trench MOSFET technology. This N-channel MOSFET is logic-level compatible, fast switching, and fully automotive qualified to AEC-Q101 at 175°C. The BXK9Q29-60A trench MOSFET features a 60V maximum drain-source voltage, 84A maximum peak drain current, and 27W maximum total power dissipation. This N-channel MOSFET also features a 23.7mΩ typical drain-source on-state resistance, 25mJ maximum non-repetitive drain-source avalanche energy, and 15.8A maximum non-repetitive avalanche current. The BXK9Q29-60A trench MOSFET is EU/CN RoHS-compliant. Typical applications include LED lighting, switching circuits, and DC-DC conversion.
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Nexperia BUK9Q N-Channel Trench MOSFETLogic-level compatible, fast switching, and fully automotive qualified to AEC-Q101 at 175°C.09-09-25
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Nexperia GANB1R2-040QBA & GANB012-040CBA GaN HEMTs40V, 1.2mΩ or 12mΩ, bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistors (HEMTs).03-07-25 -
Bourns SMF4C & SMF4C-Q TVS DiodesProtects against voltage transients induced by inductive load switching in a variety of electronics.03-07-25 -
Semtech RClamp03301H-RClamp0801H ESD & EOS ProtectionESD and EOS Protection are specifically developed to protect high-speed Ethernet lines.03-07-25 -
Nexperia GANE7R0/GANE2R7/GANE1R8 100V GaN FETsNormally off e-mode devices that deliver superior performance and very low on-state resistance.03-07-25 -
ROHM Semiconductor Super Fast Recovery DiodesFeature a low forward voltage and low switching loss, and are ideal for general rectification.02-07-25 -
Renesas Electronics TP65H030G4Px 650V 30mΩ GaN FETsThese FETs come in TOLT, TO247, and TOLL packages and use the Gen IV Plus SuperGaN® platform.01-07-25 -
ROHM Semiconductor High Efficiency Schottky Barrier DiodesDesigned to improve the tradeoff between low VF and low IR, and are used in freewheel diodes.01-07-25 -
ROHM Semiconductor Ultra-Low IR Schottky Barrier DiodesFeature a 200V repetitive peak reverse voltage, high reliability, and ultra-low reverse current.30-06-25 -
ROHM Semiconductor Small Signal Dual Channel MOSFETsFeature low on-resistance and fast switching, and are ideal for motor drives.30-06-25 -
Micro Commercial Components (MCC) Instrument Cluster SolutionsProvides support for real-time vehicle data in today’s digitally enhanced dashboards.30-06-25 -
Semtech uClamp5591P μClamp® TVS DiodeFeatures large cross-sectional area junctions for conducting high transient currents.27-06-25 -
Semtech RClamp03348P RailClamp® ESD Protection DiodeDesigned to minimize both ESD peak clamping and TLP clamping voltage.27-06-25 -
Littelfuse IXSJxN120R1 1,200 V SiC Power MOSFETsHigh-performance devices designed for demanding power conversion applications.23-06-25 -
onsemi NFAM Intelligent Power Modules (IPMs)Highly integrated, compact solutions designed for efficient and reliable motor control.23-06-25 -
Littelfuse DFNAK3 TVS DiodesOffers 3kA surge current and IEC 61000-4-5 compliance in a compact, surface-mount package.23-06-25 -
onsemi NVMFS4C03NWFET1G Single N-Channel Power MOSFETDelivers excellent thermal performance and low RDS(on) in a compact 5mm x 6mm PowerFLAT package.23-06-25 -
ROHM Semiconductor RBx8 Schottky Barrier DiodesFeature high reliability, low IR, silicon epitaxial planar structure, and up to 1A IO.18-06-25 -
ROHM Semiconductor Automotive 40A & 80A Power MOSFETsFeature low on-resistance and are ideal for ADAS, automotive, and lighting applications.16-06-25 -
PANJIT 50V Enhancement Mode MOSFETsThese MOSFETs have advanced Trench process technology and offer a low RDS(ON).09-06-25 -
onsemi NVMFDx 100V Dual N-Channel Power MOSFETsFeatures low RDS(on) values and fast switching characteristics in a space-saving DFN-8 package.09-06-25 -
Littelfuse SC1122-01ETG TVS Diode22V, 60pF, 9A, unidirectional discrete TVS diode that provides general-purpose ESD protection.04-06-25 -
ROHM Semiconductor RV7E035AT P-Channel Small Signal MOSFETCompact, high-performance MOSFET designed for low-voltage switching applications.04-06-25 -
Littelfuse SC1230-01UTG TVS Diode22V, 60pF, 9A, unidirectional discrete TVS diode that provides general-purpose ESD protection.04-06-25 -
Infineon Technologies CoolSiC™ 750V G2 Silicon Carbide MOSFETsAutomotive and industrial qualified MOSFETs with an up to 78mΩ maximum drain-source on-resistance.03-06-25